TwinMOS 4GB DDR3L 1600MHz 1.35V SO-DIMM RAM

Suitable for Notebook PC
Model Specification 4GB DDR3L 1600 SO-DIMM
Working Voltage 1.35V~1.5V
CL 9 cycles
Row Cycle Time (tRCmin) 48.125ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.)
Row Active Time (tRASmin) 33.75ns (min.)
Maximum Operating Power TBD W*
UL Rating 94V – 0
Operating Temperature 0℃ – +85℃
Storage Temperature -55℃ – +100℃

TZs 70,000
Category: ,

Description

Keeping abreast with the latest trend to launch high capacity products to replace the old, TwinMOS is now offering a new choice of superb value expansion with its  Hynix die. High capacity DDR3 features outstanding product quality that users have come to expect from TwinMOS and the product has also passed the strictest tests for quality assurance. Not only that, TwinMOS’s DDR3L is manufactured with full compliance to the specifications prescribed by JEDEC (Joint Electron Device Engineering Council) and has gone through extensive burn-in tests. DDR2 features standard 240 Pin SO-DIMM design and operates on 1.8V of power to achieve low power consumption with a truly eco-friendly specification.

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